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Exciton molecules and trions (experimental examples: germanium, silicon, gallium arsenide). Effects of collective interaction in exciton-nonequilibrium high density carrier system.Exciton polaritons, surplus light-exciton waves and their experimental observation. Delay and spatial dispersion effects in exciton resonance region.Effect of external static fields on exciton spectra: excitons in electric and magnetic fields in conditions of uniaxial deformation.Screening in cases of nondegenerate and degenerate electron (hole) gas, Debye-Hückel and Thomas-Fermi screening length. Polarized and dielectric screening of electron-hole interaction in exciton.Examples: germanium, silicon, gallium arsenide. Exciton-phonon interaction with deformation and polarized phonons, indirect exciton-phonon transitions.Excitons in strongly anisotropic crystal media. Absorption in dissociated exciton state region. Two classes of discrete exciton spectra: zero-order wave-vector allowed and forbidden optical transitions. Effective mass approximation for hydrogen-like exciton. Hydrogen-like exciton model (Wannier-Mott excitons).Davydov doublet structure of molecular crystal spectrum (experimental examples: benzene, anthracene, etc.). Strong coupling approximation and Fresnel excitons. Behavior of optical constants upon superconductor gap opening. Optical properties of normal metal in low-frequency limit. Plasma vibration damping (Landau damping). Plasma vibrations and plasma edge structure. Drude-Lorentz optical properties of metals.Electron in harmonic potential field (Fock-Darvin model). Magnetooptical oscillations in semiconductor absorption spectra. Landau oscillator and diamagnetic quantization of electron spectrum. Effect of external static magnetic field.Effect of static electrical field and Franz-Keldysh effect. Hydrostatic pressure and effect of uniaxial deformation. Effect of external static actions on semiconductor exciton spectra.Multiphoton optical transitions and optical constant structure.Examples: germanium, silicon, gallium phosphide. Indirect electron-phonon optical transitions. Frelich model of polarized electron-phonon interaction. Interaction of electrons with deformation and polarized lattice vibrations.Theoretical analysis and experimental examples: germanium, layer (sandwich) semiconductor structures. Analytical behavior of optical constants in energy spectrum critical points (Van Hove singularity, maximum and minimum points, saddle points).Dielectric permeability, absorption factors, reflection extinctions, refractive index. Relation to optical constants illustrated by Lorentz oscillator. General theoretical analysis of interband optical transitions. Interband optical transitions and their optical properties.Energy band structure for specific semiconductors: germanium, silicon, gallium arsenide.Lattinger Hamiltonian, light and heavy holes. General properties of electron in periodic crystal field.
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Heitler-London-Heisenberg and Gundt-Bloch methods in electron crystal theory. One-electron approximation, Hartree-Fock method. Electrons in perfect crystal and energy band concept.Size quantization spectra in low-dimensional systems. Excitons in magneto-mixed semiconductors. Carrier spin and exciton optical orientation in semiconductors. Impurity states in dielectrics and semiconductors. Collective interaction effects in exciton and nonequilibrium high-density carrier system. Effects of delay and spatial dispersion in exciton resonance region. Effect of external static fields on exciton spectra. Drude-Lorentz optical properties of metals. Interband optical transitions and their optical properties. Energy band structure in germanium, silicon, gallium arsenide. Heitler-London-Heisenberg and Gundt-Bloch methods. Spectroscopy of Semiconductors and DielectricsĮlectrons in perfect crystal and energy band concept.